APT60S20BG Microsemi Power Products Group, APT60S20BG Datasheet - Page 3

• Manufacturer Part Number: APT60S20BG
• Description: DIODE SCHOTTKY 75A 200V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT60S20BG

• Voltage - Forward (vf) (max) @ If: 900mV @ 60A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 75A
• Current - Reverse Leakage @ Vr: 1mA @ 200V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 55ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: APT60S20BGMI; APT60S20BGMI

TYPICAL PERFORMANCE CURVES
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1800
1600
1400
1200
1000
Figure 6. Dynamic Parameters vs. Junction Temperature
3500
3000
2500
2000
1500
1000
Figure 8. Junction Capacitance vs. Reverse Voltage
200
180
160
140
120
100
800
600
400
200
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
0
0
0
0
Figure 2. Forward Current vs. Forward Voltage
0
0
1
-di
T
V
V
F
J
R
= 125°C
F
/dt, CURRENT RATE OF CHANGE (A/µs)
= 133V
, ANODE-TO-CATHODE VOLTAGE (V)
T
T
0.2
25
J
, JUNCTION TEMPERATURE (°C)
J
V
= 150°C
200
R
I
RRM
T
, REVERSE VOLTAGE (V)
J
0.4
= 125°C
50
120A
Q
10
rr
400
0.6
75
30A
T
t
J
rr
= 25°C
100
T
0.8
J
= -55°C
600
Q
60A
rr
t
125
rr
1
100 200
1.2
800
150
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
Figure 3. Reverse Recovery Time vs. Current Rate of Change
120
100
250
200
150
100
100
80
60
40
20
35
30
25
20
15
10
50
50
10
0
5
0
0
5
1
25
0
0
1
-di
-di
T
T
V
V
J
F
J
F
R
R
= 125°C
= 125°C
= 133V
/dt, CURRENT RATE OF CHANGE(A/µs)
= 133V
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 9. Single Pulse UIS SOA
Lead Temperature
50
200
200
Case Temperature (°C)
Limited
Time in Avalanche (µs)
10
75
400
400
30A
100
100
30A
120A
120A
60A
600
600
Duty cycle = 0.5
60A
125
T
J
= 150°C
1000 2200
800
800
150