APT100S20BG Microsemi Power Products Group, APT100S20BG Datasheet - Page 3

• Manufacturer Part Number: APT100S20BG
• Description: DIODE SCHOTTKY 120A 200V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT100S20BG

• Voltage - Forward (vf) (max) @ If: 950mV @ 100A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 120A
• Current - Reverse Leakage @ Vr: 2mA @ 200V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 70ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: APT100S20BGMI; APT100S20BGMI

TYPICAL PERFORMANCE CURVES
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
2500
2000
1500
1000
6000
5000
4000
3000
2000
1000
Figure 8. Junction Capacitance vs. Reverse Voltage
360
300
240
180
120
500
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
0
0
0
0
0
0
1
Figure 2. Forward Current vs. Forward Voltage
-di
T
V
J
R
V
F
T
= 125°C
= 133V
F
/dt, CURRENT RATE OF CHANGE (A/µs)
J
, ANODE-TO-CATHODE VOLTAGE (V)
T
25
= 150°C
J
, JUNCTION TEMPERATURE (°C)
T
V
200
J
R
= 125°C
, REVERSE VOLTAGE (V)
130A
I
RRM
0.5
50
t
rr
10
400
75
50A
Q
100
1.0
rr
T
J
600
= -55°C
T
t
J
Q
rr
125
= 25°C
rr
100 200
100A
1.5
800
150
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
Figure 3. Reverse Recovery Time vs. Current Rate of Change
120
100
400
300
200
100
200
100
80
60
40
20
40
35
30
25
20
15
10
50
10
0
5
1
0
5
0
25
1
0
0
-di
-di
T
V
T
V
J
R
J
R
F
F
= 125°C
= 125°C
= 133V
= 133V
/dt, CURRENT RATE OF CHANGE(A/µs)
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 9. Single Pulse UIS SOA
50
Lead Temperature
200
200
Case Temperature (°C)
Time in Avalanche (µs)
10
Limited
75
400
400
50A
130A
100
100A
100
100A
Duty cycle = 0.5
600
600
T
125
J
= 150°C
130A
1000 2500
50A
150
800
800