BAS21W,115 NXP Semiconductors, BAS21W,115 Datasheet - Page 4

• Manufacturer Part Number: BAS21W,115
• Description: DIODE SW 200V 200MA HS UMT3
• Manufacturer: NXP Semiconductors

Specifications of BAS21W,115

• Package / Case: SC-70-3, SOT-323-3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 250V
• Current - Average Rectified (io): 225mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 225 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063268115

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS21W_SER_1
Product data sheet
Table 7.
[1]
Table 8.
T
[1]
Symbol
Per device
R
R
Symbol
Per diode
V
I
C
t
R
rr
amb
F
th(j-a)
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
When switched from I
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
F
Rev. 01 — 9 October 2009
= 10 mA to I
R
= 10 mA; R
Conditions
I
I
V
V
f = 1 MHz; V
F
F
R
R
= 100 mA
= 200 mA
= 200 V
= 200 V; T
Conditions
in free air
L
= 100 ; measured at I
R
j
= 0 V
= 150 C
BAS21W series
High-voltage switching diodes
[1]
[1]
Min
-
-
Min
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
Typ
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
625
300
Max
1.0
1.25
100
100
2
50
Unit
K/W
K/W
Unit
V
V
nA
pF
ns
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A