BAS21W,115 NXP Semiconductors, BAS21W,115 Datasheet - Page 7

• Manufacturer Part Number: BAS21W,115
• Description: DIODE SW 200V 200MA HS UMT3
• Manufacturer: NXP Semiconductors

Specifications of BAS21W,115

• Package / Case: SC-70-3, SOT-323-3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 250V
• Current - Average Rectified (io): 225mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 225 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Diode Capacitance: 2 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063268115

NXP Semiconductors
9. Package outline
10. Packing information
BAS21W_SER_1
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
BAS21W
BAS21AW
BAS21SW
Fig 7.
For further information and the availability of packing methods, see
Package outline SOT323 (SC-70)
Packing methods
Package
SOT323
2.2
2.0
Dimensions in mm
Rev. 01 — 9 October 2009
1.35
1.15
Description
4 mm pitch, 8 mm tape and reel
1
2.2
1.8
1.3
3
2
0.4
0.3
0.45
0.15
BAS21W series
High-voltage switching diodes
Section
1.1
0.8
0.25
0.10
[1]
04-11-04
14.
Packing quantity
3000
-115
© NXP B.V. 2009. All rights reserved.
10000
-135
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