BAS21W,115 NXP Semiconductors, BAS21W,115 Datasheet - Page 8

DIODE SW 200V 200MA HS UMT3

BAS21W,115

Manufacturer Part Number
BAS21W,115
Description
DIODE SW 200V 200MA HS UMT3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS21W,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
250V
Current - Average Rectified (io)
225mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
225 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
200 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063268115
NXP Semiconductors
11. Soldering
BAS21W_SER_1
Product data sheet
Fig 8.
Fig 9.
3.65 2.1
2.35
Reflow soldering footprint SOT323 (SC-70)
Wave soldering footprint SOT323 (SC-70)
(3 )
0.6
1.425
(3 )
0.55
(3 )
Rev. 01 — 9 October 2009
3
2.65
1.85
2.575
4.6
1.325
2
1
(3 )
0.5
1.3
(2 )
09
1.8
BAS21W series
High-voltage switching diodes
Dimensions in mm
direction during soldering
Dimensions in mm
© NXP B.V. 2009. All rights reserved.
preferred transport
solder lands
solder resist
solder paste
occupied area
sot323_fr
solder lands
solder resist
occupied area
sot323_fw
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