BAS21W,115 NXP Semiconductors, BAS21W,115 Datasheet - Page 5

DIODE SW 200V 200MA HS UMT3

BAS21W,115

Manufacturer Part Number
BAS21W,115
Description
DIODE SW 200V 200MA HS UMT3
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS21W,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
250V
Current - Average Rectified (io)
225mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
225 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
200 mW
Operating Temperature Range
- 55 C to + 150 C
Maximum Diode Capacitance
2 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063268115
NXP Semiconductors
BAS21W_SER_1
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
I
F
600
400
200
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.4
0.8
(1)
( A)
I
R
10
10
10
10
10
10
10
1.2
1
(2)
(3)
(4)
2
1
2
3
4
5
0
V
006aab212
F
(V)
50
Rev. 01 — 9 October 2009
1.6
(3)
(1)
(2)
(4)
100
Fig 2.
150
I
FSM
(A)
10
10
10
1
2
1
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
200
j
= 25 C; prior to surge
006aab213
V
R
(V)
250
10
BAS21W series
High-voltage switching diodes
10
2
10
© NXP B.V. 2009. All rights reserved.
3
t
p
( s)
mbg703
10
4
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