PMEG2010EV,115 NXP Semiconductors, PMEG2010EV,115 Datasheet - Page 2

• Manufacturer Part Number: PMEG2010EV,115
• Description: DIODE SCHOTTKY 20V 1A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG2010EV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 500mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 15V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 25pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 8 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 20 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057099115; PMEG2010EV T/R; PMEG2010EV T/R

NXP Semiconductors
FEATURES
• Forward current: 1 A
• Reverse voltage: 20 V
• Very low forward voltage
• Ultra small SMD package
• Flat leads: excellent coplanarity and improved thermal
APPLICATIONS
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection in a SOT666 ultra small SMD plastic
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
Note
1. Only valid if pins 3 and 4 are connected in parallel.
2003 Aug 20
V
I
I
T
T
T
SYMBOL
F
FSM
behaviour.
stg
j
amb
R
Low V
F
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
MEGA Schottky barrier diode
PARAMETER
t = 8.3 ms half sinewave;
JEDEC method; note 1
2
CONDITIONS
PINNING
handbook, halfpage
Marking code: F1.
PIN
1
2
3
4
5
6
Fig.1 Simplified outline (SOT666) and symbol.
cathode
cathode
anode
anode
cathode
cathode
6
1
5
2
3
4
−
−
−
−65
−
−65
DESCRIPTION
MIN.
1, 2
5, 6
PMEG2010EV
20
1
8
+150
125
+125
Product data sheet
MAX.
MHC310
3, 4
V
A
A
°C
°C
°C
UNIT