PMEG2010EV,115 NXP Semiconductors, PMEG2010EV,115 Datasheet - Page 4

• Manufacturer Part Number: PMEG2010EV,115
• Description: DIODE SCHOTTKY 20V 1A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG2010EV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 500mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 15V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 25pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 8 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 20 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057099115; PMEG2010EV T/R; PMEG2010EV T/R

NXP Semiconductors
GRAPHICAL DATA
2003 Aug 20
handbook, halfpage
handbook, halfpage
Low V
(1) T
(2) T
(3) T
Fig.2
f = 1 MHz; T
Fig.4
(mA)
10
(pF)
I F
C d
10
10
80
60
40
20
10
−1
amb
amb
amb
0
1
3
2
0
0
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
F
amb
MEGA Schottky barrier diode
= 25 °C.
(1)
5
(2)
0.2
(3)
10
0.4
15
V F (V)
V R (V)
MHC311
MHC313
0.6
20
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(μA)
I R
10
10
10
10
10
amb
amb
amb
1
5
4
3
2
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
5
10
15
PMEG2010EV
Product data sheet
20
(1)
(2)
(3)
V R (V)
MHC312
25