PMEG2010EV,115 NXP Semiconductors, PMEG2010EV,115 Datasheet - Page 3

• Manufacturer Part Number: PMEG2010EV,115
• Description: DIODE SCHOTTKY 20V 1A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG2010EV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 500mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 50µA @ 15V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 25pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 8 A
• Configuration: Single
• Forward Voltage Drop: 0.55 V
• Maximum Reverse Leakage Current: 20 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057099115; PMEG2010EV T/R; PMEG2010EV T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT666 standard mounting conditions.
2. Mounted on printed circuit-board, 1 cm
Soldering
The only recommended soldering method is reflow soldering.
ELECTRICAL CHARACTERISTICS
T
Notes
1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm
2. Pulse test: t
2003 Aug 20
R
V
I
C
SYMBOL
SYMBOL
amb
R
F
Low V
th j-a
d
= 25 °C unless otherwise specified.
F
thermal resistance from junction to ambient
continuous forward voltage
reverse current
diode capacitance
MEGA Schottky barrier diode
p
= 300 μs; δ = 0.02.
PARAMETER
PARAMETER
2
I
I
I
V
V
V
V
F
F
F
copper area.
R
R
R
R
= 10 mA
= 100 mA
= 1 000 mA; note 1; see Fig.2
= 5 V; note 2
= 8 V; note 2
= 15 V; note 2; see Fig.3
= 5 V; f = 1 MHz; see Fig.4
CONDITIONS
2
3
copper solder land.
note 1
note 2
CONDITIONS
240
300
480
5
7
10
19
TYP.
VALUE
405
215
PMEG2010EV
270
350
550
10
20
50
25
MAX.
Product data sheet
UNIT
K/W
K/W
mV
mV
mV
μA
μA
μA
pF
UNIT