PMEG4010EP,115 NXP Semiconductors, PMEG4010EP,115 Datasheet - Page 5

• Manufacturer Part Number: PMEG4010EP,115
• Description: SCHOTTKY RECT 40V 1.0A SOD-128
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PMEG4010EP,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 490mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 50µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 430 mV
• Maximum Reverse Leakage Current: 10 uA
• Maximum Power Dissipation: 625 mW
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061482115

NXP Semiconductors
7. Characteristics
PMEG4010EP_2
Product data sheet
Fig 3.
Z
(K/W)
th(j-a)
10
10
10
10
−1
1
3
2
10
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
duty cycle =
0.25
0.02
0.5
0.1
1
0
0.75
0.33
0.05
0.01
0.2
Table 7.
T
2
Symbol
V
I
C
10
R
O
j
F
d
= 25
3
−2
, standard footprint
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
All information provided in this document is subject to legal disclaimers.
10
−1
Rev. 02 — 15 April 2010
1
I
V
f = 1 MHz
Conditions
I
V
F
F
R
R
= 0.1 A
= 1 A
V
V
= 10 V
= 40 V
R
R
= 1 V
= 10 V
1 A low V
10
F
MEGA Schottky barrier rectifier
Min
-
-
-
-
-
-
PMEG4010EP
10
2
Typ
310
430
3
10
130
50
t
p
© NXP B.V. 2010. All rights reserved.
(s)
006aab376
Max
360
490
13
50
-
-
10
3
mV
Unit
mV
μA
μA
pF
pF
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