PMEG4010EP,115 NXP Semiconductors, PMEG4010EP,115 Datasheet - Page 6

• Manufacturer Part Number: PMEG4010EP,115
• Description: SCHOTTKY RECT 40V 1.0A SOD-128
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PMEG4010EP,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 490mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 50µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 130pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 430 mV
• Maximum Reverse Leakage Current: 10 uA
• Maximum Power Dissipation: 625 mW
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061482115

NXP Semiconductors
PMEG4010EP_2
Product data sheet
Fig 4.
Fig 6.
(A)
I
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
−1
−2
−3
−4
1
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
(1)
(2)
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
0.2
(3)
amb
(4)
= 25 °C
(5)
0.4
0.6
(pF)
C
250
200
150
100
d
50
0
0
0.8
All information provided in this document is subject to legal disclaimers.
006aab377
V
F
(V)
1
Rev. 02 — 15 April 2010
10
20
Fig 5.
(A)
I
10
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
−2
−3
−4
−5
−6
−7
−8
−9
30
0
Reverse current as a function of reverse
voltage; typical values
1 A low V
j
j
j
j
006aab379
V
= 125 °C
= 85 °C
= 25 °C
= −40 °C
R
(V)
40
10
F
MEGA Schottky barrier rectifier
(1)
(2)
(3)
(4)
PMEG4010EP
20
30
© NXP B.V. 2010. All rights reserved.
006aab378
V
R
(V)
40
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