APT60DQ60BG Microsemi Power Products Group, APT60DQ60BG Datasheet - Page 3

• Manufacturer Part Number: APT60DQ60BG
• Description: IC DIODE UFAST 60A 600V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT60DQ60BG

• Voltage - Forward (vf) (max) @ If: 2.4V @ 60A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 60A
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: APT60DQ60BGMP; APT60DQ60BGMP

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
2000
1800
1600
1400
1200
1000
200
180
160
140
120
100
800
600
400
200
350
300
250
200
150
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
V
J
R
F
F
t
T
= 125°C
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
rr
, ANODE-TO-CATHODE VOLTAGE (V)
J
120A
200
, JUNCTION TEMPERATURE (°C)
0.5
25
V
R
, REVERSE VOLTAGE (V)
T
J
400
I
RRM
T
50
= 125°C
1
J
= 175°C
10
600
1.5
Q
75
rr
30A
T
800
100
J
2
T
= -55°C
J
t
rr
= 25°C
1000
Q
125
2.5
100 200
rr
60A
1200
3.0
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
300
250
200
150
100
120
100
50
30
25
20
15
10
80
60
40
20
0
5
0
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
30A
120A
600
600
100
120A
60A
60A
800
800
125
Duty cycle = 0.5
T
1000
1000
J
T
150
V
J
= 175°C
R
= 125°C
= 400V
30A
1200
1200
175