APT60D100BG Microsemi Power Products Group, APT60D100BG Datasheet - Page 3

• Manufacturer Part Number: APT60D100BG
• Description: DIODE ULT FAST 60A 1000V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT60D100BG

• Voltage - Forward (vf) (max) @ If: 2.5V @ 60A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 60A
• Current - Reverse Leakage @ Vr: 250µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 280ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: APT60D100BGMI; APT60D100BGMI

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
8000
7000
6000
5000
4000
3000
2000
1000
200
180
160
140
120
100
600
500
400
300
200
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
t
V
rr
J
R
F
F
T
= 125°C
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
120A
200
, JUNCTION TEMPERATURE (°C)
0.5
25
V
I
T
RRM
R
, REVERSE VOLTAGE (V)
J
= 125°C
400
T
50
1
J
= 150°C
10
600
1.5
75
30A
800
100
2
Q
T
Q
rr
J
T
rr
= -55°C
1000
J
125
2.5
t
rr
= 25°C
100 200
60A
1200
150
3
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
500
400
300
200
100
180
160
140
120
100
60
50
40
30
20
10
80
60
40
20
0
0
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
30A
120A
600
600
100
60A
120A
800
800
125
60A
Duty cycle = 0.5
T
1000
1000
J
T
150
V
J
= 175°C
R
= 125°C
= 667V
30A
1200
1200
175