APT15GN120BDQ1G Microsemi Power Products Group, APT15GN120BDQ1G Datasheet

IGBT 1200V 45A 195W TO247

APT15GN120BDQ1G

Manufacturer Part Number
APT15GN120BDQ1G
Description
IGBT 1200V 45A 195W TO247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT15GN120BDQ1G.pdf (9 pages)

Specifications of APT15GN120BDQ1G

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 15A
Current - Collector (ic) (max)
45A
Power - Max
195W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT15GN120BDQ1GMI
APT15GN120BDQ1GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT15GN120BDQ1G
Manufacturer:
MITSUBISHI
Quantity:
1 000
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive V
design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V Field Stop
SSOA
(BR)CES
R
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
GINT
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. Low gate charge simplifies gate drive
1
(V
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 600µA, T
GE
GE
C
C
= 0V, I
= 15A, T
= 15A, T
= 0V, T
= 0V, T
C
j
= 0.5mA)
j
j
= 25°C)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1200
APT15GN120BDQ1(G)
MIN
5.0
1.4
APT15GN120BDQ1
APT15GN120BDQ1G*
45A @ 1200V
-55 to 150
1200
APT15GN120BDQ1(G)
TYP
±30
195
300
N/A
5.8
1.7
2.0
45
22
45
1200V
G
G
C
E
MAX
TBD
200
120
6.5
2.1
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT15GN120BDQ1G Summary of contents

Page 1

... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT15GN120BDQ1(G) APT15GN120BDQ1 APT15GN120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish 25°C unless otherwise specified. C APT15GN120BDQ1(G) 1200 ± 45A @ 1200V 195 -55 to 150 300 MIN TYP MAX 1200 5 ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

V = 15V 125° 25° -55° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J ...

Page 4

V = 15V 800V 25°C T =125° 4.3Ω 100 µ COLLECTOR ...

Page 5

TYPICAL PERFORMANCE CURVES 2,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.70 0. 0.9 0.50 0.7 0.40 0.5 0.30 0.3 0.20 0.10 0.1 0.05 ...

Page 6

APT15DQ120 90% t d(off) 90% Collector Voltage t f 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions Gate Voltage T = 125°C J 10% Gate Voltage t d(on) ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° 25° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward Voltage ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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