APT11GF120KRG Microsemi Power Products Group, APT11GF120KRG Datasheet - Page 5

• Manufacturer Part Number: APT11GF120KRG
• Description: IGBT 1200V 25A 156W TO220
• Manufacturer: Microsemi Power Products Group

Specifications of APT11GF120KRG

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 8A
• Current - Collector (ic) (max): 25A
• Power - Max: 156W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1,000
1.00
0.80
0.60
0.40
0.20
500
100
V
Junction
temp. (°C)
50
10
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
0.437
0.363
10
30
-4
40
C
RECTANGULAR PULSE DURATION (SECONDS)
C
C
ies
oes
res
0.00221
0.0432
50
SINGLE PULSE
10
-3
160
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
0
T
D = 50 %
V
R
J
CE
G
10
= 125
= 4.3Ω
= 800V
2
Figure 18,Minimim Switching Safe Operating Area
-2
25
20
15
10
5
0
I
°
C
0
C
V
, COLLECTOR CURRENT (A)
CE
4
200
, COLLECTOR TO EMITTER VOLTAGE
T
C
= 100
6
400
°
C
8
Note:
T
C
Peak T J = P DM x Z θJC + T C
600
= 75
10
10
Duty Factor D =
°
-1
C
800
12
t 1
t 2
14
1000 1200 1400
APT11GF120KR(G)
t 1
16
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f