APT25GN120BG Microsemi Power Products Group, APT25GN120BG Datasheet - Page 4
APT25GN120BG
Manufacturer Part Number
APT25GN120BG
Description
IGBT 1200V 67A 272W TO247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT25GN120BG.pdf
(6 pages)
Specifications of APT25GN120BG
Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 25A
Current - Collector (ic) (max)
67A
Power - Max
272W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT25GN120BG
Manufacturer:
APT
Quantity:
20 000
FIGURE 15, Switching Energy Losses vs. Gate Resistance
14000
12000
10000
7000
6000
5000
4000
3000
2000
1000
8000
6000
4000
2000
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
30
25
20
15
10
45
40
35
30
25
20
15
10
5
0
5
0
0
0
I
I
CE
CE
I
CE
V
V
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 4.3Ω
= 4.3Ω
= 800V
= +15V
= 800V
=
R
4.3Ω, L
G
, GATE RESISTANCE (OHMS)
, or
T
125°C
J
=
=
100
25 or 125°C,V
µ
H, V
CE
=
V
800V
GE
GE
=
= 15V
15V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
=
T
=
J
4.3Ω
, JUNCTION TEMPERATURE (°C)
V
800V
GE
=15V,T
J
=25°C
T
J
=
125°C, V
V
GE
GE
=15V,T
=
15V
J
=125°C