APT30GN60BDQ2G Microsemi Power Products Group, APT30GN60BDQ2G Datasheet - Page 5

• Manufacturer Part Number: APT30GN60BDQ2G
• Description: IGBT 600V 63A 203W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT30GN60BDQ2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 203W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
Figure 17, Capacitance vs Collector-To-Emitter Voltage
3,000
1,000
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
500
100
130
Figure 20, Operating Frequency vs Collector Current
50
10
V
50
10
0
CE
5
1
10
0
5 10 15 20 25 30 35 40 45 50 55
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
T
T
D = 50 %
V
R
-5
J
C
CE
G
= 125
= 75
= 4.3Ω
= 400V
D = 0.9
°
°
10
I
C
C
C
, COLLECTOR CURRENT (A)
0.5
0.3
0.05
0.7
0.1
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
10
30
-4
40
C
C
C
RECTANGULAR PULSE DURATION (SECONDS)
ies
oes
res
SINGLE PULSE
50
F
f
f
P
10
max1
max2
max
diss
-3
=
= min (f
=
=
t
T
d(on)
R
P
E
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
, f
cond
+ t
off
max2
d(off)
)
10
+ t
100
Figure 18,Minimim Switching Safe Operating Area
-2
90
80
70
60
50
40
30
20
10
f
0
0
V
CE
100
, COLLECTOR TO EMITTER VOLTAGE
200
Note:
Peak T J = P DM x Z θJC + T C
300
10
Duty Factor D =
-1
400
APT30GN60BD_SDQ2(G)
t 1
t 2
500
t 1
/
t 2
600
1.0
700