APT20GF120BRG Microsemi Power Products Group, APT20GF120BRG Datasheet - Page 3

• Manufacturer Part Number: APT20GF120BRG
• Description: IGBT 1200V 32A 200W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT20GF120BRG

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 32A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

APT20GF120BR
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
0.005
0.001
2,000
1,000
0.05
0.01
Figure 3, Typical Output Characteristics @ V
500
100
1.0
0.5
0.1
V
Figure 1, Typical Output Characteristics (T
V
V
50
40
30
20
10
60
40
30
20
10
50
10
0
CE
0
CE
CE
0.01
10
0
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
250µSec. Pulse Test
D=0.5
V
GE
0.05
0.02
0.01
0.2
0.1
4
= 15V
T
T
SINGLE PULSE
f = 1MHz
C
C
2
0.1
=+25°C
=+150°C
T
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
C
=-55°C
V
GE
8
10
=17 & 15V
-4
4
1.0
12
6
16
10
C
C
13V
11V
C
7V
9V
oes
RECTANGULAR PULSE DURATION (SECONDS)
res
ies
10
J
GE
= 25°C)
-3
20
50
8
= 15V
10
-2
Figure 2, Typical Output Characteristics (T
100
Figure 4, Maximum Forward Safe Operating Area
V
V
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
50
40
30
20
10
50
10
20
16
12
CE
CE
0
5
1
8
4
0
0
1
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
OPERATION
T
V CE (SAT)
10
I
J
LIMITED
C
= +25°C
T
T
SINGLE PULSE
BY
= I
-1
C
J
V
Q
=+150°C
C2
CE
=+25°C
g
4
, TOTAL GATE CHARGE (nC)
=240V
5
40
10
Note:
Peak T J = P DM x Z JC + T C
8
Duty Factor D =
V
80
GE
1.0
50 100
t 1
=17 & 15V
12
V
CE
t 2
=600V
120
t 1
/ t
16
2
13V
11V
9V
7V
J
= 150°C)
1200
160
20
10
100µS
1mS
10mS