APT35GN120BG Microsemi Power Products Group, APT35GN120BG Datasheet
APT35GN120BG
Manufacturer Part Number
APT35GN120BG
Description
IGBT 1200V 94A 379W TO247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT35GN120BG.pdf
(6 pages)
Specifications of APT35GN120BG
Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 35A
Current - Collector (ic) (max)
94A
Power - Max
379W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT35GN120BGMI
APT35GN120BGMI
APT35GN120BGMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT35GN120BG
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT35GN120BG
Manufacturer:
APT
Quantity:
20 000
TYPICAL PERFORMANCE CURVES
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior V
parameter distribution and slightly positive V
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V NPT Field Stop
SSOA
(BR)CES
R
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
GINT
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(on)
CE(on)
performance. Easy paralleling results from very tight
1
(V
CE
CE
CE
@ T
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
CE(on)
®
GE
GE
C
C
C
GE
GE
= 150°C
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
temperature coefficient. Built-in
C
GE
= 1mA, T
GE
GE
C
C
= 0V, I
= 35A, T
= 35A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 250µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1200
MIN
1.4
5
APT35GN120B(G)
105A @ 1200V
-55 to 150
APT35GN120B
APT35GN120BG*
1200
TYP
±30
105
379
300
5.8
1.7
1.9
94
46
6
APT35GN120B(G)
G
G
1200V
C
E
MAX
TBD
100
600
6.5
2.1
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω
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APT35GN120BG Summary of contents
Page 1
... 1200V 0V 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT35GN120B(G) APT35GN120B APT35GN120BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish 25°C unless otherwise specified. C APT35GN120B(G) 1200 ± 105 105A @ 1200V 379 -55 to 150 300 MIN TYP MAX 1200 5 5 ...
Page 2
Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Gate-Collector ("Miller ") Charge Q gc Switching Safe Operating Area ...
Page 3
V , COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 100 250µs PULSE TEST<0.5 % DUTY CYCLE ...
Page 4
V = 15V 800V 25°C T =125° 2.2Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE ...
Page 5
TYPICAL PERFORMANCE CURVES 4,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.35 0.9 0.30 0.25 0.7 0.20 0.5 0.15 0.3 0.10 0.05 0.1 0. ...
Page 6
APT40DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% t d(off) 90 10% 0 Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions Gate ...