APT20GF120SRDQ1G Microsemi Power Products Group, APT20GF120SRDQ1G Datasheet - Page 3

• Manufacturer Part Number: APT20GF120SRDQ1G
• Description: IGBT 1200V 36A 200W D3PAK
• Manufacturer: Microsemi Power Products Group

Specifications of APT20GF120SRDQ1G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 36A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D³Pak (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
6
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
T
250µs PULSE
T
= 15V
2
T
J
J
1
, GATE-TO-EMITTER VOLTAGE (V)
J
CYCLE
= 125°C
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
= 125°C
10
T
T
4
0
J
J
2
= 25°C
= 25°C
6
25
T
J
3
T
= -55°C
J
12
50
= -55°C
8
4
10
75
5
100 125 150
12
14
J
6
14
= 25°C)
16
16
7
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
80
70
60
50
40
30
20
10
16
14
12
10
50
45
40
35
30
25
20
15
10
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
5
4
3
2
1
0
5
0
-50
V
0
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 15A
-25
V
20
25
T
GE
T
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
5
0
GATE CHARGE (nC)
40
50
V
V
25
CE
CE
= 600V
= 240V
10
60
75
50
15V
75 100 125 150
100
80
13V
12V
15
V
11V
CE
100
125
J
= 960V
= 125°C)
8V 7V
9V
120
150
20