APT50GN120B2G Microsemi Power Products Group, APT50GN120B2G Datasheet

IGBT 1200V 134A 543W TMAX

APT50GN120B2G

Manufacturer Part Number
APT50GN120B2G
Description
IGBT 1200V 134A 543W TMAX
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT50GN120B2G

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
134A
Power - Max
543W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior V
parameter distribution and slightly positive V
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
• Trench Gate: Low V
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V NPT Field Stop
SSOA
(BR)CES
R
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
GINT
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(on)
CE(on)
performance. Easy paralleling results from very tight
1
(V
CE
CE
CE
@ T
8
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
@ T
CE(on)
®
GE
GE
C
C
GE
GE
= 150°C
J
= 110°C
= 15V, I
= 15V, I
C
= 150°C
= ±20V)
, I
= 25°C
temperature coefficient. Built-in
C
GE
= 2mA, T
GE
GE
C
C
= 0V, I
= 50A, T
= 50A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 400µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1200
MIN
1.4
5
APT50GN120B2(G)
150A @ 1200V
-55 to 150
APT50GN120B2G*
APT50GN120B2
1200
TYP
±30
134
150
543
300
5.8
1.7
1.9
66
4
APT50GN120B2(G)
1200V
(B2)
G
MAX
TBD
100
600
6.5
2.1
T-Max
®
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

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APT50GN120B2G Summary of contents

Page 1

... 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT50GN120B2(G) APT50GN120B2 APT50GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) T-Max G = 25°C unless otherwise specified. C APT50GN120B2(G) 1200 ±30 134 66 150 150A @ 1200V 543 -55 to 150 300 MIN TYP ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Gate-Collector ("Miller ") Charge Q gc Switching Safe Operating Area ...

Page 3

V , COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 160 250µs PULSE TEST<0.5 % DUTY CYCLE 140 ...

Page 4

V = 15V 800V 25°C T =125° 2.2Ω 100 µ COLLECTOR TO EMITTER CURRENT (A) CE ...

Page 5

TYPICAL PERFORMANCE CURVES 6,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0. Figure ...

Page 6

APT30DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% t d(off) 90 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions Gate ...

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