GT20J321(Q) Toshiba, GT20J321(Q) Datasheet

GT20J321(Q)

Manufacturer Part Number

GT20J321(Q)

Description

IGBT DUAL 600V 20A TO-220

Manufacturer

Toshiba

Datasheet

1.GT20J321Q.pdf (7 pages)

Specifications of GT20J321(Q)

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

2.45V @ 15V, 20A

Current - Collector (ic) (max)

20A

Power - Max

45W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

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High Power Switching Applications

Fast Switching Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Equivalent Circuit

Fourth-generation IGBT

Enhancement mode type

Fast switching (FS): Operating frequency up to 50 kHz (reference)

High speed: t

Low switching loss : E

Low saturation voltage: V

FRD included between emitter and collector

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter-collector forward

current

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Thermal resistance (IGBT)

Thermal resistance (diode)

Gate

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

= 0.04 μs (typ.)

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Collector

Emitter

: E

off

= 0.40 mJ (typ.)

= 0.43 mJ (typ.)

CE (sat)

1 ms

= 2.0 V (typ.)

(Ta = 25°C)

Symbol

th (j-c)

GT20J321

GES

CES

stg

Marking

−55 to 150

Rating

2.78

4.23

Max

600

±20

150

20J321

°C/W

Unit

°C

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Weight: 1.7 g (typ.)

JEDEC

JEITA

TOSHIBA

2-10R1C

GT20J321

2006-11-01

―

Unit: mm

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GT20J321(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Turn-on time Switching time Turn-off delay time Fall time Turn-off time Turn-on switching loss Switching loss Turn-off switching ...

Page 3

I – Common emitter 25° Collector-emitter voltage V ( – Common emitter ...

Page 4

Switching time – (on) 3 Common emitter 300 25° 125°C ...

Page 5

C – 10000 3000 1000 300 100 C oes 30 Common emitter res MHz Tc = 25° 100 Collector-emitter voltage – ...

Page 6

FRD 0 IGBT 10 −1 10 −2 10 − 25°C −4 10 −5 −4 −3 −2 − Pulse width t ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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