GT20J321(Q) Toshiba, GT20J321(Q) Datasheet - Page 3

• Manufacturer Part Number: GT20J321(Q)
• Description: IGBT DUAL 600V 20A TO-220
• Manufacturer: Toshiba

Specifications of GT20J321(Q)

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 20A
• Current - Collector (ic) (max): 20A
• Power - Max: 45W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

40
30
20
10
20
16
12
40
30
20
10
0
8
4
0
0
0
0
0
Common
emitter
Tc = 25°C
Tc = 125°C
Collector-emitter voltage V
I C = 5 A
Gate-emitter voltage V
Gate-emitter voltage V
1
4
4
10
V
20
2
8
8
−40
I
I
CE
25
C
C
– V
– V
– V
40
20
CE
GE
15
GE
12
12
3
GE
GE
CE
Common
emitter
Tc = 25°C
Common
emitter
V CE = 5 V
(V)
(V)
V GE = 7 V
16
16
4
(V)
9
8
20
20
5
3
20
16
12
20
16
12
−60
8
4
0
8
4
0
5
4
3
2
1
0
0
0
Common
emitter
V GE = 15 V
I C = 5 A
I C = 5 A
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
Case temperature Tc (°C)
10
10
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
40
20
40
20
GE
GE
– Tc
12
12
60
GE
GE
Common
emitter
Tc = −40°C
Common
emitter
Tc = 125°C
(V)
(V)
100
16
16
I C = 5 A
GT20J321
2006-11-01
40
30
20
10
140
20
20