GT10Q101(Q) Toshiba, GT10Q101(Q) Datasheet
GT10Q101(Q)
Specifications of GT10Q101(Q)
Related parts for GT10Q101(Q)
GT10Q101(Q) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...
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Electrical Characteristics Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance Note1: Switching time measurement circuit and input/output waveforms GT10Q301 −V GE ...
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I – Common emitter Tc = 25° Collector-emitter voltage V ( – ...
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Switching time – 0 0.05 Common emitter 600 V 0. ± ...
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C – 3000 1000 300 100 30 Common emitter MHz Tc = 25°C 3 0.1 0 100 Collector-emitter voltage V CE Safe operating area 100 50 ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...