GT10Q101(Q) Toshiba, GT10Q101(Q) Datasheet - Page 4

• Manufacturer Part Number: GT10Q101(Q)
• Description: IGBT 1200V 10A TO-3PN
• Manufacturer: Toshiba

Specifications of GT10Q101(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 10A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

0.05
0.03
0.01
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
0.3
0.1
10
1
5
3
1
3
1
3
3
3
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 10 A
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 10 A
Note2
5
5
5
t off
t on
t f
t r
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Switching loss E
Switching time t
Switching time t
10
10
10
Gate resistance R
Gate resistance R
Gate resistance R
30
30
30
50
50
50
on
on
off
, E
G
G
G
, t
, t
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 10 A
100
100
100
off
r
f
– R
– R
(Ω)
(Ω)
(Ω)
– R
: Tc = 25°C
: Tc = 125°C
G
G
G
300 500
300
E on
E off
300 500
500
4
0.05
0.03
0.01
0.05
0.03
0.01
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
0.3
0.1
10
1
5
3
1
3
1
0
0
0
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 75 Ω
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 75 Ω
Note2
E on
E off
t on
t off
t r
t f
2
: Tc = 25°C
: Tc = 125°C
2
: Tc = 25°C
: Tc = 125°C
2
Switching loss E
Switching time t
Switching time t
Collector current I
Collector current I
Collector current I
4
4
4
6
6
6
on
on
off
, E
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 75 Ω
C
C
C
, t
, t
8
8
8
r
f
off
(A)
(A)
(A)
– I
– I
: Tc = 25°C
: Tc = 125°C
– I
C
C
C
10
10
10
GT10Q101
2006-10-31
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