GT10Q101(Q) Toshiba, GT10Q101(Q) Datasheet - Page 3

• Manufacturer Part Number: GT10Q101(Q)
• Description: IGBT 1200V 10A TO-3PN
• Manufacturer: Toshiba

Specifications of GT10Q101(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 10A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

20
16
12
20
16
12
20
16
12
8
4
0
8
4
0
8
4
0
0
0
0
Common emitter
V CE = 5 V
Common emitter
Tc = 25°C
Collector-emitter voltage V
Tc = 125°C
4
Gate-emitter voltage V
Gate-emitter voltage V
1
4
I C = 4 A
25
20
V
8
2
8
I
I
CE
C
C
– V
– V
−40
– V
10
CE
GE
15
GE
12
12
3
20
13
Common emitter
Tc = 25°C
GE
GE
CE
V GE = 10 V
(V)
(V)
16
16
4
(V)
12
20
20
5
3
20
16
12
20
16
12
4
3
2
1
0
−60
8
4
0
8
4
0
0
0
Common emitter
Tc = 125°C
Common emitter
V GE = 15 V
Tc = −40°C
Common emitter
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
Case temperature Tc (°C)
I C = 4 A
I C = 4 A
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
10
10
GE
– Tc
GE
12
12
60
20
GE
GE
20
(V)
(V)
100
16
16
I C = 4 A
GT10Q101
20
10
2006-10-31
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20
20