GT25Q301(Q) Toshiba, GT25Q301(Q) Datasheet
GT25Q301(Q)
Specifications of GT25Q301(Q)
Related parts for GT25Q301(Q)
GT25Q301(Q) Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Diode forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) Note: ...
Page 3
I – Common emitter Tc = 25° Collector-emitter voltage V ( – ...
Page 4
Switching Time – Common emitter 600 ± 25° 125°C 0.5 0.3 0.1 ...
Page 5
C – 10000 3000 1000 300 100 Common emitter MHz Tc = 25°C 10 0.1 0 100 Collector-emitter voltage – ...
Page 6
Tc = 25° Diode stage 0 10 IGBT stage −1 10 −2 10 −3 10 −4 10 −5 −4 −3 −2 − Pulse ...
Page 7
... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...