GT25Q301(Q) Toshiba, GT25Q301(Q) Datasheet - Page 5

• Manufacturer Part Number: GT25Q301(Q)
• Description: IGBT DUAL 1200V 25A TO-3P LH
• Manufacturer: Toshiba

Specifications of GT25Q301(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 25A
• Current - Collector (ic) (max): 25A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

10000
3000
1000
300
100
100
0.5
0.3
0.1
30
10
50
40
30
20
10
50
30
10
0.1
0
5
3
1
1
0
I C max (pulsed)*
I C max (continuous)
Tc = 125°C
*: Single
Curves must be
derated linearly with
increase in
temperature.
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
Common emitter
V GE = 0
nonrepetitive
pulse Tc = 25°C
0.3
3
Collector-emitter voltage V
Collector-emitter voltage V
DC operation
1
1
Forward voltage V
10
Safe Operating Area
3
25
2
C – V
30
−40
I
F
– V
10
CE
100
F
3
100 μs*
30
10 ms*
F
300
CE
1 ms*
CE
(V)
100
4
50 μs*
(V)
(V)
1000
300
C ies
C oes
C res
1000
3000
5
5
1000
800
600
400
200
100
100
0.5
0.3
0.1
30
10
50
30
10
0
3
1
5
3
1
0
1
0
t rr
Common emitter
R L = 12 Ω
Tc = 25°C
T j ≤ 125°C
V GE = ±15 V
R G = 43 Ω
I rr
3
5
600
40
V CE = 200 V
Collector-emitter voltage V
Forward current I
Gate charge Q
10
Reverse Bias SOA
10
V
CE
80
t
30
rr
, V
400
, I
GE
rr
15
– I
100
– Q
120
G
F
F
Common emitter
di/dt = −200 A/μs
V GE = 0
G
20
(nC)
300
(A)
: Tc = 25°C
: Tc = 125°C
160
CE
25
1000
GT25Q301
2006-11-01
(V)
3000
200
30
20
16
12
8
4
0
1000
100
10