PMBFJ108,215 NXP Semiconductors, PMBFJ108,215 Datasheet - Page 4

• Manufacturer Part Number: PMBFJ108,215
• Description: JFET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ108,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 80mA @ 15V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 30pF @ 10V (VGS)
• Resistance - Rds(on): 8 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2078-2; 934003880215; PMBFJ108 T/R

Philips Semiconductors
9397 750 13401
Product data sheet
Fig 1. Switching circuit.
Fig 2. Input and output waveforms.
V
V
V
i
o
GS
V
PMBFJ108; PMBFJ109; PMBFJ110
GS off
= 0 V
Rev. 03 — 4 August 2004
V
10%
90%
90%
10%
DD
10 nF
t
s
t
off
50
t
10 F
f
50
DUT
R
L
0.1 F
SAMPLING
SCOPE
001aab288
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
t
d
t
on
N-channel junction FETs
t
r
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