BSR58,215 NXP Semiconductors, BSR58,215 Datasheet
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BSR58,215
Specifications of BSR58,215
BSR58 T/R
BSR58 T/R
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BSR58,215 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 ...
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Philips Semiconductors N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors in a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. PINNING ...
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Philips Semiconductors N-channel FETs RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage Gate-source voltage Forward gate current Total power dissipation amb Storage temperature range Junction temperature THERMAL RESISTANCE From ...
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Philips Semiconductors N-channel FETs Switching times Conditions I and V D GSM Delay time Rise time Turn-off time 0 handbook, halfpage GSM 10% V ...
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Philips Semiconductors N-channel FETs PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC ...
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Philips Semiconductors N-channel FETs DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet ...