BSR58,215 NXP Semiconductors, BSR58,215 Datasheet - Page 4

• Manufacturer Part Number: BSR58,215
• Description: MOSFET N-CH 40V 8MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSR58,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 8mA @ 15V
• Drain To Source Voltage (vdss): 40V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 40V
• Voltage - Cutoff (vgs Off) @ Id: 800mV @ 0.5nA
• Resistance - Rds(on): 60 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 Ohms
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: 0.8 V to 4 V
• Gate-source Breakdown Voltage: 40 V
• Maximum Drain Gate Voltage: 40 V
• Continuous Drain Current: 80 mA
• Drain Current (idss At Vgs=0): 8 mA to 80 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933410760215; BSR58 T/R; BSR58 T/R

Philips Semiconductors
Pulse generator
Oscilloscope
April 1991
handbook, halfpage
Switching times
BSR56; R =
BSR57; R =
BSR58; R =
t
Z
t
R
C
r
r
o
i
i
N-channel FETs
= t
V
Conditions I
Delay time
Rise time
Turn-off time
DD
V o
V i
f
V GSM
= 0.02
= 50
= 10 V; V
1 ns
0.75 ns
2.5 pF
0
1 M
Fig.2 Switching times waveforms.
10%
90%
D
1910
464
953
and V
GS
t d
= 0
t r
GSM
t off
200 ns
MBK299
I
t
t
t
D
d
r
off
V
GSM
4
handbook, halfpage
handbook, halfpage
(mW)
P tot
300
200
100
=
=
0
0
Fig.4 Power derating curve.
BSR56
40
V i
BSR56; BSR57; BSR58
Fig.3 Test circuit.
20
10
25
6
3
50
80
BSR57
V DD
120
R
T.U.T
10
50
6
6
4
MBK298
V o
Product specification
BSR58
160
T amb ( C)
100 ns
MDA245
10 ns
10 ns
5 mA
4 V
200