BSR58,215 NXP Semiconductors, BSR58,215 Datasheet - Page 5

• Manufacturer Part Number: BSR58,215
• Description: MOSFET N-CH 40V 8MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSR58,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 8mA @ 15V
• Drain To Source Voltage (vdss): 40V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 40V
• Voltage - Cutoff (vgs Off) @ Id: 800mV @ 0.5nA
• Resistance - Rds(on): 60 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 Ohms
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: 0.8 V to 4 V
• Gate-source Breakdown Voltage: 40 V
• Maximum Drain Gate Voltage: 40 V
• Continuous Drain Current: 80 mA
• Drain Current (idss At Vgs=0): 8 mA to 80 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933410760215; BSR58 T/R; BSR58 T/R

PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
Philips Semiconductors
April 1991
DIMENSIONS (mm are the original dimensions)
N-channel FETs
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
5
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
BSR56; BSR57; BSR58
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
Product specification
X
v
ISSUE DATE
M
97-02-28
A
SOT23