BSR58,215 NXP Semiconductors, BSR58,215 Datasheet - Page 5
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BSR58,215
Manufacturer Part Number
BSR58,215
Description
MOSFET N-CH 40V 8MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BSR56215.pdf
(6 pages)
Specifications of BSR58,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
8mA @ 15V
Drain To Source Voltage (vdss)
40V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
800mV @ 0.5nA
Resistance - Rds(on)
60 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
60 Ohms
Drain Source Voltage Vds
40 V
Gate-source Cutoff Voltage
0.8 V to 4 V
Gate-source Breakdown Voltage
40 V
Maximum Drain Gate Voltage
40 V
Continuous Drain Current
80 mA
Drain Current (idss At Vgs=0)
8 mA to 80 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933410760215
BSR58 T/R
BSR58 T/R
BSR58 T/R
BSR58 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSR58,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
Philips Semiconductors
April 1991
DIMENSIONS (mm are the original dimensions)
N-channel FETs
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
5
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
BSR56; BSR57; BSR58
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
Product specification
X
v
ISSUE DATE
M
97-02-28
A
SOT23