BSR58,215 NXP Semiconductors, BSR58,215 Datasheet - Page 3

• Manufacturer Part Number: BSR58,215
• Description: MOSFET N-CH 40V 8MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSR58,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 8mA @ 15V
• Drain To Source Voltage (vdss): 40V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 40V
• Voltage - Cutoff (vgs Off) @ Id: 800mV @ 0.5nA
• Resistance - Rds(on): 60 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 Ohms
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: 0.8 V to 4 V
• Gate-source Breakdown Voltage: 40 V
• Maximum Drain Gate Voltage: 40 V
• Continuous Drain Current: 80 mA
• Drain Current (idss At Vgs=0): 8 mA to 80 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933410760215; BSR58 T/R; BSR58 T/R

Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Notes
1. Mounted on a ceramic substrate of 8 mm
CHARACTERISTICS
T
April 1991
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Forward gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
Gate-source cut-off current
Drain cut-off current
Drain current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source voltage (on)
Drain-source resistance (on) at f = 1 kHz
Feedback capacitance at f = 1 MHz
j
= 25 C unless otherwise specified
N-channel FETs
I
V
V
V
I
I
I
I
D
D
D
D
D
I
V
DS
DS
DS
G
= 0,5 nA; V
= 20 mA; V
= 10 mA; V
= 5 mA; V
= 0; V
GS
= 1 A; V
= 0 V; V
= 15 V; V
= 15 V; V
= 10 V; V
GS
= 0; T
DS
DS
GS
GS
GS
GS
GS
GS
DS
= 0
= 15 V
= 0
= 0
= 0
= 20 V
= 0
= 10 V
a
= 0
= 25 C
amb
= 40 C (note 1)
10 mm
I
V
V
V
r
C
DSS
ds on
V
V
0.7 mm.
DSon
DSon
DSon
rss
(BR)GSS
(P)GS
3
I
DSX
BSR56
I
GSS
V
I
P
T
T
R
BSR56; BSR57; BSR58
GF
V
stg
j
DGO
tot
th j-a
V
750
GSO
50
40
10
25
DS
4
5
BSR57
max.
max.
100
500
20
40
40
2
6
5
max.
max.
max.
max.
max.
max.
=
Product specification
65 to 150
BSR58
400 mV
1.0 nA
1.0 nA
0.8 V
80 mA
40 V
60
250 mW
150
430 K/W
8 mA
4 V
5 pF
40 V
40 V
40 V
50 mA
mV
mV
C
C