SSM6L35FE(TE85L,F) Toshiba, SSM6L35FE(TE85L,F) Datasheet
SSM6L35FE(TE85L,F)
Specifications of SSM6L35FE(TE85L,F)
Related parts for SSM6L35FE(TE85L,F)
SSM6L35FE(TE85L,F) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...
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Q1 Electrical Characteristics Characteristics Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Drain–source forward voltage Q2 Electrical Characteristics ...
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Q1 Switching Time Test Circuit (a) Test Circuit 2 μ D.U. ≤ 1% < Ω) (Z out Common Source ...
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Q1 (N-ch MOSFET) I – 400 2.5 V 300 200 100 0 0 0.5 1 Drain–source voltage V R – (ON Gate–source voltage ...
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Q1 (N-ch MOSFET) V – 1.0 0.5 0 − Ambient temperature Ta (°C) I – 1000 Common Source 100 25° ...
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Q2 (P-ch MOSFET) I – -250 -10V -200 -150 -100 - -0.5 -1 Drain–source voltage (ON Gate–source voltage (ON ...
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Q2 (P-ch MOSFET) V – -0.8 -0.6 -0.4 -0.2 0 − Ambient temperature Ta (°C) I – 1000 Common Source 100 ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...