SSM6L35FE(TE85L,F) Toshiba, SSM6L35FE(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: SSM6L35FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .18A ES6
• Manufacturer: Toshiba

Specifications of SSM6L35FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 100mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 9.5pF @ 3V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: SSM6L35FE(TE85LF)TR

Q1 (N-ch MOSFET)
400
300
200
100
10
0
10
5
0
5
0
0
1
0
V GS = 1.2 V
1.5 V
2.5 V
4 V
Common Source
Ta = 25°C
10 V
Drain–source voltage V
Gate–source voltage V
2
0.5
Drain current I
4 V
10
R
R
DS (ON)
2.5 V
DS (ON)
I
4
D
– V
1
DS
– V
– I
D
6
D
GS
100
25°C
(mA)
Common Source
Ta = 25°C
DS
Common Source
I D = 5 mA
GS
1.5
V GS = 1.2 V
Ta = 100°C
(V)
8
(V)
1.8 V
1.5 V
−25°C
1000
2
10
4
1000
0.01
100
10
0.1
10
10
5
0
−50
1
5
0
0
0
V GS = 1.2 V, I D = 5 mA
1.5 V, 5 mA
Common Source
V DS = 3 V
Common Source
2.5 V, 50 mA
4 V, 50 mA
25°C
Ta = 100°C
Gate–source voltage V
Gate–source voltage V
Ambient temperature Ta (°C)
2
0
−25°C
1
R
R
DS (ON)
DS (ON)
4
I
D
– V
50
GS
– V
– Ta
6
GS
2
25°C
Common Source
I D = 50 mA
GS
GS
100
SSM6L35FE
Ta = 100°C
8
(V)
(V)
2008-03-21
−25°C
150
10
3