SSM6P15FE(TE85L,F) Toshiba, SSM6P15FE(TE85L,F) Datasheet

SSM6P15FE(TE85L,F)

Manufacturer Part Number

SSM6P15FE(TE85L,F)

Description

MOSFET DUAL P-CH 30V .1A ES6

Manufacturer

Toshiba

Datasheet

1.SSM6P15FETE85LF.pdf (5 pages)

Specifications of SSM6P15FE(TE85L,F)

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

12 Ohm @ 10mA, 4V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

100mA

Vgs(th) (max) @ Id

1.7V @ 100µA

Input Capacitance (ciss) @ Vds

9.1pF @ 3V

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

ES6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Other names

SSM6P15FE(TE85LF)TR

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High Speed Switching Applications

Analog Switch Applications

•

Absolute Maximum Ratings

Marking

Handling Precaution

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation (Ta = 25°C)

Channel temperature

Storage temperature range

Note:

Note 1: Total rating, mounted on FR4 board

Small package

Low ON resistance : R

D Q

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm

Characteristics

0.3 mm

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

: R

Pulse

= 12 Ω (max) (@V

= 32 Ω (max) (@V

(Ta = 25°C) (Q1, Q2 Common)

SSM6P15FE

Symbol

GSS

(Note 1)

stg

Equivalent Circuit

= −4 V)

= −2.5 V)

−55~150

Rating

−100

−200

−30

±20

150

× 6)

Unit

°C

(top view)

Weight: 0.003g(typ.)

JEDEC

JEITA

TOSHIBA

1: Source1

2: Gate1

3: Drain2

4: Source2

5: Gate2

6: Drain1

SSM6P15FE

2-2N1D

2007-11-01

―

Unit: mm

Related parts for SSM6P15FE(TE85L,F)

SSM6P15FE(TE85L,F) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications • Small package • Ω (max) (@V Low ON resistance : Ω (max) (@ Absolute Maximum Ratings Characteristics Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation (Ta = 25°C) ...

Page 2

Electrical Characteristics Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Switching Time Test Circuit (a) Test ...

Page 3

ID - VDS -250 Common Source Ta=25°C -10 -7 -200 -150 -100 - -0.5 -1 Drain-Source Voltage VDS(V) RDS(ON Common Source Ta=25° VGS=-2. -10 -100 Drain Current ID(mA) RDS(ON) ...

Page 4

ID 1000 Common Source VDS= -3V Ta=25°C 100 -10 -100 Drain current ID (mA VDS 100 Common Source VGS=0V f=1MHz Ta=25° -0.1 -1 -10 Drain-Source voltage VDS (V) PD ...

Page 5

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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