TPCF8304(TE85L,F) Toshiba, TPCF8304(TE85L,F) Datasheet
TPCF8304(TE85L,F)
Specifications of TPCF8304(TE85L,F)
Related parts for TPCF8304(TE85L,F)
TPCF8304(TE85L,F) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Thermal Characteristics Characteristic Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient ( (Note 2b) ...
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Electrical Characteristics Characteristic Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...
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I – Common source -3.5 - 25°C -6 Pulse test -3.0 -4 -4.5 -2 -2.3 0 -0.4 -0.8 0 -0.2 -0.6 Drain-source voltage V DS (V) I – ...
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R – (ON) 150 120 -0.8A, -1.6A, -3. -4. -0.8A, -1.6A, -3. -10V 30 Common source Pulse test 0 −80 − ...
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Single pulse 100 10 1 0.001 0.01 Safe operating area -100 I D max (pulsed Single pulse Ta = 25°C Curves must be derated linearly with V DSS increase ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...