TPCF8304(TE85L,F) Toshiba, TPCF8304(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: TPCF8304(TE85L,F)
• Description: MOSFET P-CH DUAL 30V 3.2A 2-3U1B
• Manufacturer: Toshiba

Specifications of TPCF8304(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.2V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: *
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1.35 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
-2
-8
-6
-4
10
0
1
-5
-4
-3
-2
-1
0
-0.1
0
0
Common source
V DS = -10 V
Pulse test
Common source
V DS = -10 V
Pulse test
-4.5
-0.2
-6
Drain-source voltage V DS
Gate-source voltage V GS
-1
-10
-0.3
Drain current I D (A)
100
-0.4
-2
⎪Y
I
I
D
D
fs
– V
-3.5
– V
⎪ – I
-1
Ta = −55°C
DS
-3.0
GS
25
-0.6
-3
D
25
Ta = −55°C
Common source
Ta = 25°C
Pulse test
-3
-0.8
(V)
(V)
V GS = -2.3
-4
100
-2.8
-2.6
-2.7
-2.5
-1.0
-10
-5
4
1000
-1.6
-2.0
-1.2
-0.4
-10
-0.8
100
-8
-6
-4
-2
10
0
0
0.1
0
0
-10
Common source
Ta = 25°C
Pulse test
-0.8
Drain-source voltage V DS
-2
Gate-source voltage V GS
-1
-3.5
-6
Drain current I D (A)
-4.5
-3.0
R
-4
-2
V
DS (ON)
I
DS
D
-1.6
– V
V GS = -4.5 V
– V
-1
DS
GS
– I
-6
-3
-10
D
Common source
Ta= 25℃
Pulse test
Common source
Ta = 25°C
Pulse test
I D = -3.2A
-2.8
V GS = -2.3 V
-2.7
(V)
(V)
-4
-8
TPCF8304
-2.6
-2.5
2006-11-17
-10
-5
-10