NTLJD3119CTAG ON Semiconductor, NTLJD3119CTAG Datasheet - Page 3

• Manufacturer Part Number: NTLJD3119CTAG
• Description: MOSFET N/P-CH 20V 4.6/4.1A 6WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJD3119CTAG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 271pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 4.2 S, 3.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A @ N Channel or 3.3 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Parameter
V
V
(T
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
(BR)DSS
C
C
J
GS(TH)
C
G(TOT)
I
I
DS(on)
Q
Q
g
GSS
G(TH)
DSS
OSS
RSS
= 25°C unless otherwise noted)
ISS
FS
GS
GD
/T
/T
J
J
N/P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
http://onsemi.com
V
V
f = 1.0 MHz, V
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
GS
GS
V
V
V
V
GS
GS
GS
GS
3
= 0 V, V
= 0 V, V
= 0 V, V
= 0 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
V
V
V
V
V
V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
V
V
GS
GS
V
V
V
GS
DS
DS
DS
GS
GS
V
GS
GS
GS
DS
= V
= 0 V
Test Conditions
= −4.5 V , I
= −5.0 V , I
= −2.5 V, I
= −1.8 V, I
DS
DS
= 0 V, V
= 0 V, V
= 2.5 V , I
= 1.8 V , I
DS
DS
= 4.5 V , I
= 10 V, I
DS
GS
= −16 V
= −16 V
= 16 V
= 16 V
DS
DS
DS
DS
DS
DS
DS
DS
= 0 V
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
GS
GS
D
D
D
D
D
D
D
D
= 1.7 A
= −2.0 A
= −1.6 A
= ±8.0 V
= ±8.0 V
= 3.8 A
= −4.1 A
= 2.0 A
= 1.7 A
= −2.0 A
I
I
V
V
V
I
D
I
D
V
V
V
D
D
D
D
D
T
T
D
D
D
D
D
DS
DS
DS
DS
DS
DS
= −250 mA
J
J
= −250 mA
= 3.8 A
= 3.8 A
= 3.8 A
= 3.8 A
= 250 mA
= 250 mA
= −2.0 A
= −2.0 A
= −2.0 A
= −2.0 A
= 25 °C
= 85 °C
= −10 V
= −10 V
= −10 V
= 10 V
= 10 V
= 10 V
−0.4
Min
−20
0.4
20
10.4
9.95
−0.7
−3.0
2.44
Typ
101
150
271
531
0.7
4.2
3.1
3.7
5.5
0.3
0.7
0.6
1.0
1.0
1.4
37
75
46
65
72
91
43
56
±100
±100
Max
−1.0
−1.0
−10
100
135
120
200
1.0
1.0
10
65
85
mV/°C
mV/°C
Unit
mW
mA
nA
nC
pF
V
V
S