NTLJD3119CTAG ON Semiconductor, NTLJD3119CTAG Datasheet - Page 5

• Manufacturer Part Number: NTLJD3119CTAG
• Description: MOSFET N/P-CH 20V 4.6/4.1A 6WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJD3119CTAG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 271pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 4.2 S, 3.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A @ N Channel or 3.3 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.09
0.08
0.07
0.06
0.05
0.04
0.03
10
0.1
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
8
6
4
2
0
1.0
−50
0
Figure 3. On−Resistance versus Drain Current
I
V
D
GS
= 3.8 A
0.5
−25
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
= 4.5 V
V
V
TYPICAL PERFORMANCE CURVES − N−CHANNEL
DS
2.0
GS
T
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1
V
0
GS
= 4 V to 2.2 V
1.5
T
25
J
3.0
Temperature
= 25°C
2
50
4.0
2.5
75
100
3
5.0
T
I
D
J
= 3.8 A
= 25°C
3.5
125
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2.0 V
1.8 V
1.6 V
1.4 V
1.2 V
6.0
150
4
5
10000
1000
0.14
0.12
0.08
0.06
0.04
0.02
100
0.1
10
8
6
4
2
0
0
1
1
2
Figure 4. On−Resistance versus Drain Current
T
V
Figure 6. Drain−to−Source Leakage Current
T
J
V
DS
J
= 100°C
GS
= 25°C
4
2
≥ 10 V
(T
= 0 V
V
V
Figure 2. Transfer Characteristics
J
T
DS
GS
= 25°C unless otherwise noted)
J
3
, DRAIN−TO−SOURCE VOLTAGE (V)
6
= 25°C
, GATE−TO−SOURCE VOLTAGE (V)
I
D
1.5
, DRAIN CURRENT (A)
and Gate Voltage
T
4
8
J
versus Voltage
= −55°C
T
T
10
J
J
V
5
V
V
= 150°C
= 100°C
GS
GS
GS
= 2.5 V
= 4.5 V
12
= 1.8 V
6
14
2
7
16
8
18
9
2.5
10
20