NTLJD3119CTAG ON Semiconductor, NTLJD3119CTAG Datasheet - Page 9

• Manufacturer Part Number: NTLJD3119CTAG
• Description: MOSFET N/P-CH 20V 4.6/4.1A 6WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJD3119CTAG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 271pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 4.2 S, 3.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A @ N Channel or 3.3 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
0.000001
0.1
10
1
0.05
0.02
0.01
D = 0.5
0.2
0.1
0.00001
SINGLE PULSE
TYPICAL PERFORMANCE CURVES
0.0001
0.001
Figure 22. Thermal Response
http://onsemi.com
0.01
t, TIME (s)
9
P
(pk)
DUTY CYCLE, D = t
(T
t
J
1
0.1
= 25°C unless otherwise noted)
t
2
1
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
− T
10
A
*See Note 2 on Page 1
= P
(pk)
1
R
qJA
100
(t)
1000