NTLJD3119CTAG ON Semiconductor, NTLJD3119CTAG Datasheet - Page 8

• Manufacturer Part Number: NTLJD3119CTAG
• Description: MOSFET N/P-CH 20V 4.6/4.1A 6WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJD3119CTAG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 271pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 4.2 S, 3.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A @ N Channel or 3.3 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1200
1000
100
800
600
400
200
10
1
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
5
V
C
V
I
V
C
DS
D
t
rss
DD
GS
t
iss
d(on)
d(off)
= −2.2 A
V
= 0 V
GS
t
t
= −15 V
= −4.5 V
r
f
Figure 19. Resistive Switching Time
Variation versus Gate Resistance
TYPICAL PERFORMANCE CURVES − P−CHANNEL
Figure 17. Capacitance Variation
0
V
GS
V
R
DS
G
= 0 V
, GATE RESISTANCE (W)
C
oss
5
10
0.01
100
0.1
10
1
0.1
10
T
SINGLE PULSE
*See Note 2 on Page 1
T
Figure 21. Maximum Rated Forward Biased
J
C
= 150°C
= 25°C
−V
DS
15
, DRAIN−TO−SOURCE VOLTAGE (V)
T
R
THERMAL LIMIT
PACKAGE LIMIT
J
DS(on)
= 25°C
Safe Operating Area
http://onsemi.com
1
100
LIMIT
20
8
5
4
3
2
1
0
0
2.5
1.5
0.5
Figure 18. Gate−To−Source and Drain−To−Source
V
3
2
1
0
Q
DS
0
Figure 20. Diode Forward Voltage versus Current
GS
10
V
GS
0.1
1
−V
= 0 V
(T
Q
10 ms
1 ms
10 ms
100 ms
dc
Voltage versus Total Charge
J
0.2
SD
Q
G
= 25°C unless otherwise noted)
GD
, TOTAL GATE CHARGE (nC)
T
, SOURCE−TO−DRAIN VOLTAGE (V)
J
2
= 150°C
0.3
100
0.4
QT
3
0.5
0.6
4
V
GS
T
J
0.7
= 25°C
I
T
D
J
= −2.2 A
= 25°C
5
0.8
0.9
6
20
16
12
4
0
8
1.0