NTLJD3119CTAG ON Semiconductor, NTLJD3119CTAG Datasheet - Page 7

• Manufacturer Part Number: NTLJD3119CTAG
• Description: MOSFET N/P-CH 20V 4.6/4.1A 6WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJD3119CTAG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 271pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 4.2 S, 3.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A @ N Channel or 3.3 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.5
3.5
2.5
1.5
0.5
0.09
0.08
0.07
0.06
0.05
0.04
1.6
1.4
1.2
1.0
0.8
0.6
0.1
5
4
3
2
1
0
−50
0
1.0
I
V
V
D
GS
GS
0.5
= −2.2 A
Figure 13. On−Resistance versus Drain
−25
Figure 11. On−Region Characteristics
Figure 15. On−Resistance Variation with
= −4.5 V
−V
= −4.5 V
TYPICAL PERFORMANCE CURVES − P−CHANNEL
DS
T
1
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (°C)
0
−I
1.5
D
1.5
, DRAIN CURRENT (A)
V
25
GS
Temperature
T
T
Current
2
T
= −1.9 V to −6 V
J
J
J
= 100°C
= −55°C
= 25°C
50
2.5
75
3
2.0
100
3.5
T
J
= 25°C
125
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−1.3 V
−1.8 V
−1.7 V
−1.6 V
−1.5 V
−1.4 V
−1.2 V
4
4.5
150
2.5
7
10000
1000
0.15
0.05
100
0.1
10
5
4
3
2
1
0
0
1
2
0
V
Figure 16. Drain−to−Source Leakage Current
T
V
DS
J
GS
Figure 14. On−Resistance versus Drain
= 25°C
4
≥ 10 V
(T
−V
= 0 V
0.5
−V
Figure 12. Transfer Characteristics
T
J
DS
J
= 25°C unless otherwise noted)
GS
= 125°C
T
6
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
Current and Gate Voltage
J
2
= 25°C
−I
D
, DRAIN CURRENT (A)
1
8
versus Voltage
V
V
T
T
GS
GS
10
J
J
T
= 150°C
= 100°C
= −2.5 V
= −4.5 V
J
1.5
3
= −55°C
12
14
2
4
16
2.5
18
20
5
3