NTLJD3119CTAG ON Semiconductor, NTLJD3119CTAG Datasheet - Page 6

• Manufacturer Part Number: NTLJD3119CTAG
• Description: MOSFET N/P-CH 20V 4.6/4.1A 6WDFN
• Manufacturer: ON Semiconductor

Specifications of NTLJD3119CTAG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.6A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 271pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 4.2 S, 3.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A @ N Channel or 3.3 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
600
500
400
300
200
100
10
1
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
10
1
V
I
V
D
C
C
DD
GS
iss
rss
= 1.0 A
= 16 V
= 4.5 V
V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
5
DS
TYPICAL PERFORMANCE CURVES − N−CHANNEL
Figure 7. Capacitance Variation
= 0 V
V
GS
R
G
, GATE RESISTANCE (W)
0
V
GS
V
DS
C
= 0 V
oss
10
5
t
d(off)
10
t
f
T
15
J
= 25°C
t
t
http://onsemi.com
r
d(on)
100
20
6
5
4
3
2
1
0
0
1.5
0.5
Q
2
1
0
0.4
Figure 8. Gate−To−Source and Drain−To−Source
V
Figure 10. Diode Forward Voltage versus Current
DS
GS
T
V
J
GS
= 25°C
= 0 V
(T
V
Q
Q
SD
0.5
J
1
Voltage versus Total Charge
GD
G
= 25°C unless otherwise noted)
, SOURCE−TO−DRAIN VOLTAGE (V)
, TOTAL GATE CHARGE (nC)
0.6
QT
2
0.7
V
GS
3
I
T
D
J
= 3.8 A
= 25°C
0.8
4
20
16
12
8
4
0
0.9