PBSS3515E NXP Semiconductors, PBSS3515E Datasheet - Page 10

• Manufacturer Part Number: PBSS3515E
• Description: TRANSISTOR,PNP,15V,0.5A,SOT416
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515E

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -15V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: SOT-416
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
12. Revision history
Table 9.
PBSS3515E_2
Product data sheet
Document ID
PBSS3515E_2
Modifications:
PBSS3515E_1
Revision history
Release date
20090427
20050418
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Figure
Table 6 “Thermal
Table 7
Figure
Section 13 “Legal
2: added
5,
“Characteristics”: switching times added
8
and 9: amended
Data sheet status
Product data sheet
Product data sheet
characteristics”: enhanced
information”: updated
Rev. 02 — 27 April 2009
15 V, 0.5 A PNP low V
Change notice
-
-
PBSS3515E
Supersedes
PBSS3515E_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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