PBSS3515E NXP Semiconductors, PBSS3515E Datasheet - Page 3

• Manufacturer Part Number: PBSS3515E
• Description: TRANSISTOR,PNP,15V,0.5A,SOT416
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515E

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -15V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: SOT-416
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Thermal characteristics
PBSS3515E_2
Product data sheet
Table 6.
[1]
[2]
Symbol
R
R
Fig 1.
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Power derating curves
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
(mW)
P
tot
300
200
100
Rev. 02 — 27 April 2009
0
0
40
(1)
(2)
Conditions
in free air
15 V, 0.5 A PNP low V
2
80
120
T
amb
006aaa412
[1]
[2]
( C)
Min
-
-
-
160
PBSS3515E
CEsat
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
833
500
175
2
.
Unit
K/W
K/W
K/W
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