PBSS3515E NXP Semiconductors, PBSS3515E Datasheet - Page 8

• Manufacturer Part Number: PBSS3515E
• Description: TRANSISTOR,PNP,15V,0.5A,SOT416
• Manufacturer: NXP Semiconductors

Specifications of PBSS3515E

• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: -15V
• Power Dissipation Pd: 150mW
• Dc Collector Current: -500mA
• Operating Temperature Range: -65°C To +150°C
• Transistor Case Style: SOT-416
• Dc Current Gain Hfe: 200
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
PBSS3515E_2
Product data sheet
Fig 12. BISS transistor switching time definition
Fig 13. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
B
C
V
CC
= 11 V; I
oscilloscope
t
d
t
on
C
= 250 mA; I
V
Rev. 02 — 27 April 2009
t
I
r
(probe)
450
Bon
R1
= 12.5 mA; I
R2
R
B
V
BB
15 V, 0.5 A PNP low V
Boff
R
C
V
CC
= 12.5 mA
DUT
V
o
mgd624
(probe)
I
450
Bon
t
s
I
(100 %)
Boff
t
off
oscilloscope
PBSS3515E
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
I
006aaa266
C
(100 %)
t
8 of 12