BSH112,235 NXP Semiconductors, BSH112,235 Datasheet

MOSFET N-CH 60V 300MA SOT-23

BSH112,235

Manufacturer Part Number
BSH112,235
Description
MOSFET N-CH 60V 300MA SOT-23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BSH112235.pdf (13 pages)

Specifications of BSH112,235

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
0.3 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1768-2
934056035235
BSH112 /T3
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
c
M3D088
c
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
BSH112 in SOT23.
BSH112
N-channel enhancement mode field-effect transistor
Rev. 01 — 25 August 2000
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package
Gate-source ESD protection diodes.
Relay driver
High speed line driver
Logic level translator.
1
technology.
Simplified outline
1
SOT23
3
2
03ab44
Symbol
N-channel MOSFET
g
Product specification
d
s
03ab60

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BSH112,235 Summary of contents

Page 1

BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSH112 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder th(j-sp) point R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance Fig 4. Transient thermal impedance from junction to ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source breakdown (BR)GSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS ...

Page 6

Philips Semiconductors 0 0.45 (A) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0. 0.2 0.4 0.6 0 Fig 5. Output characteristics: drain current as a ...

Page 7

Philips Semiconductors 3 V GS(th) (V) 2.5 typ 2 1.5 min 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction temperature. 0.3 ...

Page 8

Philips Semiconductors T Fig 13. Source (diode forward) current as a function of source-drain (diode forward) 9397 750 07305 Product specification N-channel enhancement mode field-effect transistor (A) 0.9 0.8 0.7 0.6 0.5 ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20000825 - Product specification; initial version. 9397 750 07305 Product specification N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 BSH112 © Philips Electronics ...

Page 11

Philips Semiconductors 11. Data sheet status Datasheet status Product status Definition Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data ...

Page 12

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 13

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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