BSH112,235 NXP Semiconductors, BSH112,235 Datasheet - Page 8

• Manufacturer Part Number: BSH112,235
• Description: MOSFET N-CH 60V 300MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH112,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1768-2; 934056035235; BSH112 /T3

Philips Semiconductors
9397 750 07305
Product specification
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
T
j
= 25 C and 150 C; V
voltage; typical values.
Rev. 01 — 25 August 2000
(A)
I S
GS
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
= 0 V
0
N-channel enhancement mode field-effect transistor
0.2
V GS = 0 V
0.4
0.6
150 o C
0.8
1
T j = 25 o C
1.2
V SD (V)
1.4
03aa45
1.6
© Philips Electronics N.V. 2000. All rights reserved.
BSH112
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