BSH112-01 NXP Semiconductors, BSH112-01 Datasheet
BSH112-01
Related parts for BSH112-01
BSH112-01 Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSH112 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes. ...
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... T = 100 Figure pulsed Figure Figure pulsed Rev. 01 — 25 August 2000 BSH112 Typ Max Unit 60 V 300 mA 0.83 W 150 C 2.8 5 3.8 5.3 Min Max Unit 300 ...
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... 4 ------------------ - der I Fig 2. Normalized continuous drain current as a function of solder point temperature. R DSon = D.C. 10 Rev. 01 — 25 August 2000 BSH112 03aa25 100 125 150 175 100 03aa40 ...
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... Z th(j-sp) (K/ 0.2 0.1 10 0.05 0.02 single pulse Mounted on a metal clad substrate. pulse duration. Rev. 01 — 25 August 2000 BSH112 Value Unit 150 K/W 350 K/W 03aa39 (s) © Philips Electronics N.V. 2000. All rights reserved. ...
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... 250 ; 300 mA Figure 300 mA /dt = 100 Rev. 01 — 25 August 2000 BSH112 Typ Max Unit 3.5 V 0.01 1 500 nA 2.8 5 9.25 3.8 5.3 300 mS 13 ...
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... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa42 4 10V 0.3 0 --------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 25 August 2000 BSH112 03aa43 0 > DSon 0.45 0.4 0. 0.3 150 o C 0.25 0.2 0.15 0.1 0. ...
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... C iss , C oss , C rss (pF 150 o C 0 MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 25 August 2000 BSH112 03aa37 ( min typ 0 ...
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... Product specification N-channel enhancement mode field-effect transistor (A) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0 and 150 voltage; typical values. Rev. 01 — 25 August 2000 BSH112 03aa45 150 0.6 0.8 1 1.2 1.4 1 (V) © Philips Electronics N.V. 2000. All rights reserved ...
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... scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 01 — 25 August 2000 BSH112 detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2000. All rights reserved. SOT23 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20000825 - Product specification; initial version. 9397 750 07305 Product specification N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 BSH112 © Philips Electronics N.V. 2000. All rights reserved ...
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... Rev. 01 — 25 August 2000 BSH112 Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 01 — 25 August 2000 BSH112 © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 August 2000 Document order number: 9397 750 07305 N-channel enhancement mode field-effect transistor Printed in The Netherlands BSH112 ...